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Discrete Semiconductors

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N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
  • PHP144.195
    Each (In a Tube of 50)
N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
  • Channel TypeN
  • Maximum Continuous Drain Current214 A
  • Maximum Drain Source Voltage80 V
  • Package TypeTO-220
  • SeriesTK
See similar products in MOSFETs
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • PHP336.258
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 Toshiba 2SK3564,S5Q(J
  • PHP86.24
    Each (In a Pack of 5)
N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 Toshiba 2SK3564,S5Q(J
  • Channel TypeN
  • Maximum Continuous Drain Current3 A
  • Maximum Drain Source Voltage900 V
  • Package TypeSC-67
  • Series2SK
See similar products in MOSFETs
Toshiba 2SA1987-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • PHP170.856
    Each (In a Pack of 5)
Toshiba 2SA1987-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
  • PHP221.27Each
  • Also available in industry standard packaging
N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
  • Channel TypeN
  • Maximum Continuous Drain Current214 A
  • Maximum Drain Source Voltage80 V
  • SeriesTK
  • Package TypeTO-220
See similar products in MOSFETs
N-Channel MOSFET, 15 A, 200 V, 3-Pin SC-67 Toshiba TK15A20D,S4X(S
  • PHP57.96
    Each (In a Pack of 5)
N-Channel MOSFET, 15 A, 200 V, 3-Pin SC-67 Toshiba TK15A20D,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current15 A
  • Maximum Drain Source Voltage200 V
  • Package TypeSC-67
  • Mounting TypeThrough Hole
See similar products in MOSFETs
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M
  • PHP248.76
    Each (In a Pack of 2)
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current31 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
Toshiba 2SC5712(TE12L,F) NPN Transistor, 3 A, 50 V, 3-Pin SC-62
  • PHP19.098
    Each (In a Pack of 10)
Toshiba 2SC5712(TE12L,F) NPN Transistor, 3 A, 50 V, 3-Pin SC-62
  • Transistor TypeNPN
  • Maximum DC Collector Current3 A
  • Maximum Collector Emitter Voltage50 V
  • Package TypeSC-62
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • PHP197.885
    Each (In a Pack of 2)
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current207 A
  • Maximum Drain Source Voltage100 V
  • SeriesU-MOSVIII-H
  • Package TypeTO-220SIS
See similar products in MOSFETs
Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
  • PHP251.06Each
Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
  • Maximum Continuous Collector Current40 A
  • Maximum Collector Emitter Voltage1800 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation375 W
  • Package TypeTO-3PN
See similar products in IGBTs
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • PHP234.473
    Each (In a Tube of 50)
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba 40V 3A, Schottky Diode, 2-Pin M-FLAT CMS16(T2L,TEM,Q)
  • PHP11.939
    Each (In a Pack of 10)
Toshiba 40V 3A, Schottky Diode, 2-Pin M-FLAT CMS16(T2L,TEM,Q)
  • Mounting TypeSurface Mount
  • Package TypeM-FLAT
  • Maximum Continuous Forward Current3A
  • Peak Reverse Repetitive Voltage40V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M
  • PHP248.76
    Each (In a Pack of 2)
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current31 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-220SIS
  • SeriesDTMOSIV
See similar products in MOSFETs
Toshiba 2SC4116-GR(TE85L,F NPN Transistor, 150 mA, 50 V, 3-Pin SOT-323
  • PHP5.91
    Each (In a Pack of 10)
Toshiba 2SC4116-GR(TE85L,F NPN Transistor, 150 mA, 50 V, 3-Pin SOT-323
  • Transistor TypeNPN
  • Maximum DC Collector Current150 mA
  • Maximum Collector Emitter Voltage50 V
  • Package TypeSOT-323 (SC-70)
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • PHP188.49
    Each (In a Pack of 2)
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current207 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • PHP199.08Each
  • Also available in industry standard packaging
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 Toshiba 2SK2009(F)
  • PHP22.143
    Each (In a Pack of 10)
N-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 Toshiba 2SK2009(F)
  • Channel TypeN
  • Maximum Continuous Drain Current200 mA
  • Maximum Drain Source Voltage30 V
  • Package TypeSOT-346
  • Series2SK
See similar products in MOSFETs
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • PHP64.80
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage100 V
  • SeriesTK
  • Package TypeTO-220
See similar products in MOSFETs
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
  • PHP76.812
    Each (In a Pack of 5)
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current10 A
  • Maximum Drain Source Voltage800 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
Toshiba 85V 100mA, High Speed Diode, 3-Pin SOT-346 1SS187(F)
  • PHP4.137
    Each (In a Pack of 25)
Toshiba 85V 100mA, High Speed Diode, 3-Pin SOT-346 1SS187(F)
  • Mounting TypeSurface Mount
  • Package TypeSOT-346 (SC-59)
  • Maximum Continuous Forward Current100mA
  • Peak Reverse Repetitive Voltage85V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
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