- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
25 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
108 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
Price Each
PHP382.61
(exc. VAT)
PHP428.52
(inc. VAT)
units | Per Unit |
1 - 9 | PHP382.61 |
10 - 49 | PHP371.13 |
50 - 99 | PHP359.99 |
100 - 249 | PHP349.18 |
250 + | PHP338.70 |
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |