Bipolar Transistors

Bipolar Transistors are a solid state, three-pin devices made from three layers of silicon. A bipolar transistor is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive-negative).

How a Bipolar transistor is made

Bipolar transistors are constructed by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.

How do bipolar transistors work?

Bipolar transistors have two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.

Transistors are available in panel, surface and through-hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.

They are also available as;

  • Digital transistors - are made of a semiconductor material, usually silicon, which conducts the current (or electricity) with little resistance. They also tend to have at least three terminals for easy connection to an external circuit.
  • UJT transistors - constructed of a bar of lightly dope N type silicone with a small piece of heavily doped P type material attached to one side. Since the silicon bar is lightly dope it has very high resistance.

Applications of bipolar transistors?

Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).


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Description Price Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Minimum Operating Temperature
RS Stock No. 890-2682
Mfr. Part No.2SC5200-O(S1,F,S)
BrandToshiba
PHP168.574
Each (In a Pack of 5)
units
NPN 15 A 230 V TO-3PL Through Hole 150 W Single 230 V 5 V - 3 1 20.5 x 26 x 5.2mm -
RS Stock No. 168-7405
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
PHP100.842
Each (In a Tube of 100)
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 760-3117
Mfr. Part No.2SA1943-O(Q)
BrandToshiba
PHP148.69
Each
units
PNP 15 A 230 V TO-3PL Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 124-1460
Mfr. Part No.2SC5200OTU
PHP171.328
Each (In a Tube of 25)
units
NPN 17 A 250 V TO-264 Through Hole 150 W Single 250 V 5 V 30 MHz 3 1 20 x 5 x 26mm -
RS Stock No. 903-4077
Mfr. Part No.2SC5200OTU
PHP216.09
Each (In a Pack of 5)
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NPN 17 A 250 V TO-264 Through Hole 150 W Single 250 V 5 V 30 MHz 3 1 20 x 5 x 26mm -
RS Stock No. 739-0442
Mfr. Part No.2N3904TA
PHP8.442
Each (In a Pack of 10)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm -55 °C
RS Stock No. 805-1043
Mfr. Part No.2N3904TAR
PHP3.602
Each (In a Pack of 200)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 805-1056
Mfr. Part No.2N3904TFR
PHP3.864
Each (In a Pack of 200)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 124-1317
Mfr. Part No.2N3904TA
PHP2.006
Each (On a Reel of 2000)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 300 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 842-8015
Mfr. Part No.2N3904BU
PHP2.216
Each (In a Bag of 1000)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 843-1575
Mfr. Part No.2N3904BU
PHP7.361
Each (In a Pack of 50)
units
NPN 200 mA 40 V TO-92 Through Hole 625 mW Single 60 V 6 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 761-3701
Mfr. Part No.MPSA42
PHP15.698
Each (In a Pack of 50)
units
NPN 500 mA 300 V TO-92 Through Hole 625 mW Single 300 V 6 V 50 MHz 3 1 5.2 x 4.19 x 5.33mm -55 °C
RS Stock No. 124-1357
Mfr. Part No.MPSA42
PHP5.198
Each (In a Bag of 1000)
units
NPN 500 mA 300 V TO-92 Through Hole 625 mW Single 300 V 6 V 50 MHz 3 1 5.2 x 4.19 x 5.33mm -
RS Stock No. 796-9707
Mfr. Part No.BC547B A1
PHP6.279
Each (In a Pack of 250)
units
NPN 100 mA 45 V TO-92 Through Hole 500 mW Single 50 V 6 V - 3 1 5.1 x 4.1 x 4.7mm -
RS Stock No. 170-4160
Mfr. Part No.BC547B A1
PHP1.754
Each (On a Tape of 4000)
units
NPN 100 mA 45 V TO-92 Through Hole 500 mW Single 50 V 6 V - 3 1 5.1 x 4.1 x 4.7mm -
RS Stock No. 896-2653
Mfr. Part No.TTA1943(Q)
BrandToshiba
PHP134.80
Each (In a Pack of 2)
units
PNP 15 A 230 V 2-21F1A Through Hole 150 W Single -230 V -5 V 30 MHz 3 1 20.5 x 5.2 x 26mm -
RS Stock No. 805-1148
Mfr. Part No.2SA1943OTU
PHP216.09
Each (In a Pack of 5)
units
PNP 17 A 250 V TO-264 Through Hole 150 W Single -250 V -5 V 30 MHz 3 1 20 x 5 x 26mm -
RS Stock No. 671-1113
Mfr. Part No.BC547BTA
PHP7.612
Each (In a Pack of 25)
units
NPN 100 mA 45 V TO-92 Through Hole 500 mW Single 50 V 6 V 300 MHz 3 1 5.33 x 5.2 x 4.19mm -65 °C
RS Stock No. 169-8610
Mfr. Part No.BC547BTF
PHP2.05
Each (On a Reel of 2000)
units
NPN 100 mA 45 V TO-92 Through Hole 500 mW Single 50 V 6 V 1 MHz 3 1 4.58 x 3.86 x 4.58mm -
RS Stock No. 803-1087
Mfr. Part No.BC547BTF
PHP3.864
Each (In a Pack of 200)
units
NPN 100 mA 45 V TO-92 Through Hole 500 mW Single 50 V 6 V 1 MHz 3 1 4.58 x 3.86 x 4.58mm -