Infineon BFR182E6327HTSA1 Bipolar Transistor, 35 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 pack of 25 units)*

PHP199.45

(exc. VAT)

PHP223.375

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP7.978PHP199.45
50 - 75PHP7.739PHP193.48
100 - 225PHP7.507PHP187.68
250 - 975PHP7.282PHP182.05
1000 +PHP7.064PHP176.60

*price indicative

Packaging Options:
RS Stock No.:
258-7726
Distrelec Article No.:
304-40-491
Mfr. Part No.:
BFR182E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum Operating Temperature

-65°C

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Power Dissipation Pd

250mW

Maximum Transition Frequency ft

8GHz

Maximum Emitter Base Voltage VEBO

2V

Maximum Operating Temperature

150°C

Pin Count

3

Standards/Approvals

RoHS

Series

BFR182

Width

2.4 mm

Height

1mm

Length

2.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package

VCEO max is 12 V

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