Infineon BFR182E6327HTSA1 NPN Bipolar Transistor, 35 mA, 20 V SOT-23

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Subtotal (1 pack of 25 units)*

PHP199.45

(exc. VAT)

PHP223.375

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP7.978PHP199.45
50 - 75PHP7.739PHP193.48
100 - 225PHP7.507PHP187.68
250 - 975PHP7.282PHP182.05
1000 +PHP7.064PHP176.60

*price indicative

Packaging Options:
RS Stock No.:
258-7726
Mfr. Part No.:
BFR182E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Number of Elements per Chip

1

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package
VCEO max is 12 V

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