Infineon RF Bipolar Transistor, 35 mA, 20 V, 3-Pin SOT-323

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Subtotal (1 pack of 25 units)*

PHP282.225

(exc. VAT)

PHP316.10

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP11.289PHP282.23
50 - 75PHP10.95PHP273.75
100 - 225PHP10.293PHP257.33
250 - 975PHP9.367PHP234.18
1000 +PHP8.242PHP206.05

*price indicative

RS Stock No.:
273-7305
Mfr. Part No.:
BFR182WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

250mW

Maximum Transition Frequency ft

8GHz

Pin Count

3

Maximum Operating Temperature

150°C

Series

BFR182W

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This RF transistor has qualification report according to AEC Q101.

Easy to use

Halogen free

Pb free package

RoHS compliant

With visible leads

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