Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

This image is representative of the product range

View all Bipolar Transistors

Subtotal (1 reel of 3000 units)*

PHP22,020.00

(exc. VAT)

PHP24,660.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from September 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP7.34PHP22,020.00

*price indicative

RS Stock No.:
259-1416
Mfr. Part No.:
BFP196WH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

700mW

Minimum Operating Temperature

-60°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

7.5GHz

Maximum Operating Temperature

150°C

Pin Count

4

Length

2.1mm

Height

0.9mm

Width

2 mm

Standards/Approvals

RoHS

Series

BFP196W

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.

Power amplifier for DECT and PCN systems

Pb-free (RoHS compliant) package

Related links