Infineon BFP193WH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP250.00

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PHP280.00

(inc. VAT)

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Per Unit
Per Pack*
25 - 25PHP10.00PHP250.00
50 - 75PHP9.70PHP242.50
100 - 225PHP9.312PHP232.80
250 - 975PHP8.846PHP221.15
1000 +PHP8.316PHP207.90

*price indicative

Packaging Options:
RS Stock No.:
259-1415
Distrelec Article No.:
304-40-482
Mfr. Part No.:
BFP193WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Transistor Polarity

NPN

Maximum Transition Frequency ft

8GHz

Maximum Power Dissipation Pd

580mW

Maximum Operating Temperature

150°C

Pin Count

4

Standards/Approvals

RoHS

Length

2.1mm

Width

2 mm

Series

BFP193W

Height

0.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is used for various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

Pb-free (RoHS compliant) package

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