Infineon BFP196E6327HTSA1 Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143

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Subtotal (1 pack of 25 units)*

PHP181.30

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PHP203.05

(inc. VAT)

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Per Unit
Per Pack*
25 - 25PHP7.252PHP181.30
50 - 75PHP7.034PHP175.85
100 - 225PHP6.612PHP165.30
250 - 975PHP6.017PHP150.43
1000 +PHP5.295PHP132.38

*price indicative

Packaging Options:
RS Stock No.:
258-7695
Distrelec Article No.:
304-40-483
Mfr. Part No.:
BFP196E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-143

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

7.5GHz

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Maximum Power Dissipation Pd

700mW

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP196

Standards/Approvals

RoHS

Length

2.9mm

Height

1mm

Width

2.4 mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.

Power amplifier for DECT and PCN systems

Pb free RoHS compliant package

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