Infineon BFP196E6327HTSA1 Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- RS Stock No.:
- 258-7695
- Distrelec Article No.:
- 304-40-483
- Mfr. Part No.:
- BFP196E6327HTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP199.50
(exc. VAT)
PHP223.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 11,350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP7.98 | PHP199.50 |
| 50 - 75 | PHP7.741 | PHP193.53 |
| 100 - 225 | PHP7.508 | PHP187.70 |
| 250 - 975 | PHP7.283 | PHP182.08 |
| 1000 + | PHP7.065 | PHP176.63 |
*price indicative
- RS Stock No.:
- 258-7695
- Distrelec Article No.:
- 304-40-483
- Mfr. Part No.:
- BFP196E6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP196 | |
| Standards/Approvals | RoHS | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 7.5GHz | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP196 | ||
Standards/Approvals RoHS | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.
Power amplifier for DECT and PCN systems
Pb free RoHS compliant package