Infineon BFP650FH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1444
- Mfr. Part No.:
- BFP650FH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP380.00
(exc. VAT)
PHP425.50
(inc. VAT)
Add 225 units to get free delivery
In Stock
- 2,450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP15.20 | PHP380.00 |
| 50 - 75 | PHP14.744 | PHP368.60 |
| 100 - 225 | PHP14.302 | PHP357.55 |
| 250 - 975 | PHP13.872 | PHP346.80 |
| 1000 + | PHP13.456 | PHP336.40 |
*price indicative
- RS Stock No.:
- 259-1444
- Mfr. Part No.:
- BFP650FH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Width | 1.2 mm | |
| Height | 0.55mm | |
| Length | 1.4mm | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Width 1.2 mm | ||
Height 0.55mm | ||
Length 1.4mm | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.
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