Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1439
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP170.52
(exc. VAT)
PHP190.98
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,990 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP17.052 | PHP170.52 |
| 50 - 90 | PHP16.54 | PHP165.40 |
| 100 - 240 | PHP15.548 | PHP155.48 |
| 250 - 990 | PHP14.149 | PHP141.49 |
| 1000 + | PHP12.451 | PHP124.51 |
*price indicative
- RS Stock No.:
- 259-1439
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 70GHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Series | BFP640 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 2.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 70GHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free (RoHS) | ||
Series BFP640 | ||
Height 0.9mm | ||
Length 2mm | ||
Width 2.1 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.
Gold metallization for extra high reliability
70 GHz fT-Silicon Germanium technology
Pb-free (RoHS compliant) package
Related links
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- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343