Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 pack of 10 units)*

PHP170.52

(exc. VAT)

PHP190.98

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP17.052PHP170.52
50 - 90PHP16.54PHP165.40
100 - 240PHP15.548PHP155.48
250 - 990PHP14.149PHP141.49
1000 +PHP12.451PHP124.51

*price indicative

Packaging Options:
RS Stock No.:
259-1439
Mfr. Part No.:
BFP640ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Maximum Collector Base Voltage VCBO

13V

Maximum Transition Frequency ft

70GHz

Transistor Polarity

NPN

Maximum Power Dissipation Pd

200mW

Minimum DC Current Gain hFE

110

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

1.2V

Pin Count

4

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free (RoHS)

Series

BFP640

Height

0.9mm

Width

2.1 mm

Length

2mm

Automotive Standard

AEC-Q101

The Infineon high gain low noise RF transistor provides outstanding performance for a wide range of wireless applications & Ideal for CDMA and WLAN applications.

Gold metallization for extra high reliability

70 GHz fT-Silicon Germanium technology

Pb-free (RoHS compliant) package

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