Infineon BFP520FH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1427
- Mfr. Part No.:
- BFP520FH6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP505.00
(exc. VAT)
PHP565.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,975 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP20.20 | PHP505.00 |
| 50 - 75 | PHP19.594 | PHP489.85 |
| 100 - 225 | PHP18.419 | PHP460.48 |
| 250 - 975 | PHP16.761 | PHP419.03 |
| 1000 + | PHP14.749 | PHP368.73 |
*price indicative
- RS Stock No.:
- 259-1427
- Mfr. Part No.:
- BFP520FH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Common Emitter | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Maximum Transition Frequency ft | 45GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 125mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | RoHS | |
| Width | 1.2 mm | |
| Height | 0.55mm | |
| Series | BFP520 | |
| Length | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Common Emitter | ||
Maximum Collector Base Voltage VCBO 10V | ||
Maximum Transition Frequency ft 45GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 125mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals RoHS | ||
Width 1.2 mm | ||
Height 0.55mm | ||
Series BFP520 | ||
Length 1.4mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Related links
- Infineon BFP520FH6327XTSA1 NPN RF Bipolar Transistor 10 V SOT-343
- Infineon BFP540ESDH6327XTSA1 NPN RF Bipolar Transistor 10 V SOT-343
- Infineon BFP540FESDH6327XTSA1 NPN RF Bipolar Transistor 10 V SOT-343
- Infineon BFP520H6327XTSA1 NPN RF Bipolar Transistor 10 V TSFP-4-1
- Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor 13 V SOT-343
- Infineon BFP640H6327XTSA1 NPN RF Bipolar Transistor 4.1 V SOT-343
- Infineon BF776H6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin SOT-343
- Infineon BFP196WH6327XTSA1 NPN RF Bipolar Transistor 20 V SOT-343
