Infineon BFP520H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1430
- Distrelec Article No.:
- 304-40-487
- Mfr. Part No.:
- BFP520H6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP410.70
(exc. VAT)
PHP459.975
(inc. VAT)
Add 225 units to get free delivery
Last RS stock
- Final 2,975 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP16.428 | PHP410.70 |
| 50 - 75 | PHP15.934 | PHP398.35 |
| 100 - 225 | PHP14.979 | PHP374.48 |
| 250 - 975 | PHP13.632 | PHP340.80 |
| 1000 + | PHP11.996 | PHP299.90 |
*price indicative
- RS Stock No.:
- 259-1430
- Distrelec Article No.:
- 304-40-487
- Mfr. Part No.:
- BFP520H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | Common Emitter | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Power Dissipation Pd | 120mW | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Series | BFP520F | |
| Width | 1.25 mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration Common Emitter | ||
Maximum Collector Base Voltage VCBO 10V | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Power Dissipation Pd 120mW | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Series BFP520F | ||
Width 1.25 mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
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