Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- RS Stock No.:
- 216-8352
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 50 units)*
PHP936.00
(exc. VAT)
PHP1,048.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,600 unit(s) shipping from January 26, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP18.72 | PHP936.00 |
| 100 - 100 | PHP18.158 | PHP907.90 |
| 150 - 200 | PHP17.613 | PHP880.65 |
| 250 - 450 | PHP17.085 | PHP854.25 |
| 500 + | PHP16.572 | PHP828.60 |
*price indicative
- RS Stock No.:
- 216-8352
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | BFP640F | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series BFP640F | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
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