Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor, 40 mA NPN, 4 V, 4-Pin TSLP

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PHP474.315

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PHP531.24

(inc. VAT)

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Per Pack*
15 - 15PHP31.621PHP474.32
30 - 75PHP30.673PHP460.10
90 - 225PHP29.445PHP441.68
240 - 465PHP27.973PHP419.60
480 +PHP26.295PHP394.43

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Packaging Options:
RS Stock No.:
219-5959
Mfr. Part No.:
BFR740L3RHE6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

NPN RF Bipolar Transistor

Maximum DC Collector Current Idc

40mA

Maximum Collector Emitter Voltage Vceo

4V

Package Type

TSLP

Mount Type

Surface

Maximum Collector Base Voltage VCBO

13V

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

42GHz

Maximum Emitter Base Voltage VEBO

1.2V

Minimum DC Current Gain hFE

160

Transistor Polarity

NPN

Maximum Power Dissipation Pd

160mW

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFR740L3RH

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon BFP740L3RH is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA

High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA

Low profile and small form factor leadless package

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