Infineon RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1440
- Mfr. Part No.:
- BFP640H6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 3000 units)*
PHP42,168.00
(exc. VAT)
PHP47,229.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP14.056 | PHP42,168.00 |
*price indicative
- RS Stock No.:
- 259-1440
- Mfr. Part No.:
- BFP640H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4.1V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.1 mm | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4.1V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Width 2.1 mm | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
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