Infineon RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP48,804.00

(exc. VAT)

PHP54,660.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP16.268PHP48,804.00

*price indicative

RS Stock No.:
259-1431
Mfr. Part No.:
BFP540ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

10V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

10V

Maximum Emitter Base Voltage VEBO

1V

Maximum Transition Frequency ft

30GHz

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

50

Maximum Power Dissipation Pd

250mW

Transistor Polarity

NPN

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP540

Standards/Approvals

RoHS

Width

1.25 mm

Length

2mm

Height

0.9mm

Automotive Standard

No

The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).

Outstanding Gms 21.5 dB

Noise figure F 0.9 dB

Gold metallization for high reliability

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