Infineon BFR193WH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-323

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Subtotal (1 pack of 25 units)*

PHP277.65

(exc. VAT)

PHP310.975

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP11.106PHP277.65
50 - 75PHP10.772PHP269.30
100 - 225PHP10.342PHP258.55
250 - 975PHP9.824PHP245.60
1000 +PHP9.235PHP230.88

*price indicative

Packaging Options:
RS Stock No.:
259-1456
Mfr. Part No.:
BFR193WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

580mW

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

8GHz

Maximum Operating Temperature

150°C

Pin Count

3

Height

0.9mm

Length

2.1mm

Standards/Approvals

RoHS

Series

BFR193W

Width

2 mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

fT 8 GHz, NFmin 1 dB at 900 MHz

Pb-free (RoHS compliant) package

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