Infineon BFR193WH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-323

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PHP277.65

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PHP310.975

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP11.106PHP277.65
50 - 75PHP10.772PHP269.30
100 - 225PHP10.342PHP258.55
250 - 975PHP9.824PHP245.60
1000 +PHP9.235PHP230.88

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Packaging Options:
RS Stock No.:
259-1456
Mfr. Part No.:
BFR193WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

8GHz

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Power Dissipation Pd

580mW

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.1mm

Height

0.9mm

Series

BFR193W

Width

2 mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

fT 8 GHz, NFmin 1 dB at 900 MHz

Pb-free (RoHS compliant) package

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