Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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PHP413.25

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PHP462.75

(inc. VAT)

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  • 2,325 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
25 - 25PHP16.53PHP413.25
50 - 75PHP16.034PHP400.85
100 - 225PHP15.072PHP376.80
250 - 975PHP13.716PHP342.90
1000 +PHP12.07PHP301.75

*price indicative

Packaging Options:
RS Stock No.:
259-1432
Mfr. Part No.:
BFP540ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

10V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

10V

Maximum Transition Frequency ft

30GHz

Maximum Power Dissipation Pd

250mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

50

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

1V

Pin Count

4

Maximum Operating Temperature

150°C

Height

0.9mm

Width

1.25 mm

Series

BFP540

Standards/Approvals

RoHS

Length

2mm

Automotive Standard

No

The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).

Outstanding Gms 21.5 dB

Noise figure F 0.9 dB

Gold metallization for high reliability

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