Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP450.15

(exc. VAT)

PHP504.175

(inc. VAT)

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  • 2,300 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
25 - 25PHP18.006PHP450.15
50 - 75PHP17.466PHP436.65
100 - 225PHP16.418PHP410.45
250 - 975PHP14.94PHP373.50
1000 +PHP13.148PHP328.70

*price indicative

Packaging Options:
RS Stock No.:
259-1432
Mfr. Part No.:
BFP540ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

10V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

10V

Maximum Transition Frequency ft

30GHz

Maximum Power Dissipation Pd

250mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

50

Maximum Emitter Base Voltage VEBO

1V

Minimum Operating Temperature

-55°C

Pin Count

4

Maximum Operating Temperature

150°C

Length

2mm

Standards/Approvals

RoHS

Series

BFP540

Height

0.9mm

Width

1.25 mm

Automotive Standard

No

The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).

Outstanding Gms 21.5 dB

Noise figure F 0.9 dB

Gold metallization for high reliability

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