Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP381.15

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PHP426.90

(inc. VAT)

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  • 2,950 unit(s) shipping from May 14, 2026
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Units
Per Unit
Per Pack*
25 - 25PHP15.246PHP381.15
50 - 75PHP14.789PHP369.73
100 - 225PHP13.902PHP347.55
250 - 975PHP12.65PHP316.25
1000 +PHP11.132PHP278.30

*price indicative

Packaging Options:
RS Stock No.:
259-1448
Mfr. Part No.:
BFP740FESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Power Dissipation Pd

160mW

Maximum Emitter Base Voltage VEBO

1.2V

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

44GHz

Minimum DC Current Gain hFE

160

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

4

Width

0.8 mm

Height

0.55mm

Length

1.4mm

Series

BFP

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.

Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA

High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA

OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

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