Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP381.15

(exc. VAT)

PHP426.90

(inc. VAT)

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  • 2,950 unit(s) shipping from March 19, 2026
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Units
Per Unit
Per Pack*
25 - 25PHP15.246PHP381.15
50 - 75PHP14.789PHP369.73
100 - 225PHP13.902PHP347.55
250 - 975PHP12.65PHP316.25
1000 +PHP11.132PHP278.30

*price indicative

Packaging Options:
RS Stock No.:
259-1448
Mfr. Part No.:
BFP740FESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

160

Maximum Emitter Base Voltage VEBO

1.2V

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

44GHz

Maximum Power Dissipation Pd

160mW

Maximum Operating Temperature

150°C

Pin Count

4

Standards/Approvals

RoHS

Length

1.4mm

Series

BFP

Height

0.55mm

Width

0.8 mm

Automotive Standard

No

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.

Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA

High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA

OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

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