Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS Stock No.:
- 273-7301
- Mfr. Part No.:
- BFP740ESDH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP391.05
(exc. VAT)
PHP437.975
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,675 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP15.642 | PHP391.05 |
| 50 - 75 | PHP15.344 | PHP383.60 |
| 100 - 225 | PHP14.347 | PHP358.68 |
| 250 - 975 | PHP13.251 | PHP331.28 |
| 1000 + | PHP12.985 | PHP324.63 |
*price indicative
- RS Stock No.:
- 273-7301
- Mfr. Part No.:
- BFP740ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Maximum Transition Frequency ft | 45GHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Maximum Power Dissipation Pd | 160mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP740ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Maximum Transition Frequency ft 45GHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Maximum Power Dissipation Pd 160mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP740ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
Related links
- Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor 4.2 V, 4-Pin SOT-343
- Infineon BFP740FESDH6327XTSA1 NPN RF Bipolar Transistor 13 V SOT-343
- Infineon BFP740FH6327XTSA1 NPN RF Bipolar Transistor 13 V SOT-343
- Infineon BFP740H6327XTSA1 NPN RF Bipolar Transistor 4.2 V TSFP-4-1
- Infineon BFR92PE6327HTSA1 NPN RF Bipolar Transistor 15 V, 3-Pin SOT-23
- Infineon BFR35APE6327HTSA1 NPN RF Bipolar Transistor 15 V, 3-Pin SOT-23
- Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343