Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS Stock No.:
- 273-7301
- Mfr. Part No.:
- BFP740ESDH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 25 units)*
PHP391.05
(exc. VAT)
PHP437.975
(inc. VAT)
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In Stock
- Plus 1,725 unit(s) shipping from February 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP15.642 | PHP391.05 |
| 50 - 75 | PHP15.344 | PHP383.60 |
| 100 - 225 | PHP14.347 | PHP358.68 |
| 250 - 975 | PHP13.251 | PHP331.28 |
| 1000 + | PHP12.985 | PHP324.63 |
*price indicative
- RS Stock No.:
- 273-7301
- Mfr. Part No.:
- BFP740ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP740ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP740ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
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