Infineon RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP35,100.00

(exc. VAT)

PHP39,300.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP11.70PHP35,100.00

*price indicative

RS Stock No.:
259-1449
Mfr. Part No.:
BFP740FH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Transition Frequency ft

44GHz

Maximum Emitter Base Voltage VEBO

1.2V

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

160

Maximum Power Dissipation Pd

160mW

Pin Count

4

Maximum Operating Temperature

150°C

Height

0.55mm

Width

0.8 mm

Length

1.4mm

Series

BFP

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.

Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA

High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA

OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

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