Infineon RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP42,594.00

(exc. VAT)

PHP47,706.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP14.198PHP42,594.00

*price indicative

RS Stock No.:
259-1447
Mfr. Part No.:
BFP740FESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

1.2V

Maximum Power Dissipation Pd

160mW

Minimum DC Current Gain hFE

160

Maximum Transition Frequency ft

44GHz

Minimum Operating Temperature

-55°C

Pin Count

4

Maximum Operating Temperature

150°C

Width

0.8 mm

Height

0.55mm

Length

1.4mm

Standards/Approvals

RoHS

Series

BFP

Automotive Standard

No

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.

Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA

High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA

OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA

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