Infineon Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143

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Subtotal (1 reel of 3000 units)*

PHP14,820.00

(exc. VAT)

PHP16,590.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 9000PHP4.94PHP14,820.00
12000 - 45000PHP4.715PHP14,145.00
48000 +PHP4.603PHP13,809.00

*price indicative

RS Stock No.:
258-6989
Mfr. Part No.:
BFP196E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-143

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

700mW

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Transition Frequency ft

7.5GHz

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Pin Count

4

Length

2.9mm

Standards/Approvals

RoHS

Width

2.4 mm

Height

1mm

Series

BFP196

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.

Power amplifier for DECT and PCN systems

Pb free RoHS compliant package

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