Infineon BFR182E6327HTSA1 NPN Bipolar Transistor, 35 mA, 20 V SOT-23

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Subtotal (1 reel of 3000 units)*

PHP24,315.00

(exc. VAT)

PHP27,234.00

(inc. VAT)

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  • Shipping from May 22, 2026
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Units
Per Unit
Per Reel*
3000 - 3000PHP8.105PHP24,315.00
6000 - 6000PHP7.57PHP22,710.00
9000 - 15000PHP7.417PHP22,251.00
18000 +PHP7.035PHP21,105.00

*price indicative

RS Stock No.:
258-6993
Mfr. Part No.:
BFR182E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Number of Elements per Chip

1

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package
VCEO max is 12 V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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