Infineon Bipolar Transistor, 65 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP23,718.00

(exc. VAT)

PHP26,565.00

(inc. VAT)

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  • 9,000 unit(s) shipping from July 16, 2026
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Units
Per Unit
Per Reel*
3000 - 6000PHP7.906PHP23,718.00
9000 - 42000PHP7.219PHP21,657.00
45000 +PHP6.703PHP20,109.00

*price indicative

RS Stock No.:
258-6996
Mfr. Part No.:
BFR183E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

8GHz

Maximum Power Dissipation Pd

450mW

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

2V

Maximum Operating Temperature

150°C

Pin Count

3

Series

BFR183

Length

2.9mm

Standards/Approvals

RoHS

Width

2.4 mm

Height

1mm

Automotive Standard

AEC-Q101

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package

VCEO max is 12 V

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