Infineon BFR183E6327HTSA1 NPN Bipolar Transistor, 65 mA, 20 V SOT-23

View all Bipolar Transistors
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Subtotal (1 reel of 3000 units)*

PHP23,718.00

(exc. VAT)

PHP26,565.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 6000PHP7.906PHP23,718.00
9000 - 42000PHP7.219PHP21,657.00
45000 +PHP6.703PHP20,109.00

*price indicative

RS Stock No.:
258-6996
Mfr. Part No.:
BFR183E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Number of Elements per Chip

1

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package
VCEO max is 12 V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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