Infineon RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

PHP48,291.00

(exc. VAT)

PHP54,087.00

(inc. VAT)

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Per Reel*
3000 +PHP16.097PHP48,291.00

*price indicative

RS Stock No.:
259-1459
Mfr. Part No.:
BFS483H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-363

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

450mW

Maximum Emitter Base Voltage VEBO

2V

Pin Count

6

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

BFS

Length

2.1mm

Height

0.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Pb-free (RoHS compliant) package

Two (galvanic) internal isolated Transistor in one package

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