Infineon RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

PHP48,291.00

(exc. VAT)

PHP54,087.00

(inc. VAT)

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3000 +PHP16.097PHP48,291.00

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RS Stock No.:
259-1459
Mfr. Part No.:
BFS483H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-363

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

450mW

Maximum Transition Frequency ft

8GHz

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Pin Count

6

Maximum Operating Temperature

150°C

Width

2 mm

Length

2.1mm

Height

0.9mm

Standards/Approvals

RoHS

Series

BFS

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Pb-free (RoHS compliant) package

Two (galvanic) internal isolated Transistor in one package

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