Infineon RF Bipolar Transistor, 20 mA, 20 V, 6-Pin SOT-363
- RS Stock No.:
- 273-7309
- Mfr. Part No.:
- BFS481H6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP554.40
(exc. VAT)
PHP620.925
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP22.176 | PHP554.40 |
| 50 - 75 | PHP21.73 | PHP543.25 |
| 100 - 225 | PHP20.356 | PHP508.90 |
| 250 - 975 | PHP18.759 | PHP468.98 |
| 1000 + | PHP18.387 | PHP459.68 |
*price indicative
- RS Stock No.:
- 273-7309
- Mfr. Part No.:
- BFS481H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Two (Galvanic) Internal Isolated Transistors In One Package | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Power Dissipation Pd | 175mW | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFS481 | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Two (Galvanic) Internal Isolated Transistors In One Package | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Power Dissipation Pd 175mW | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Series BFS481 | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.
Halogen free
Easy to use
Pb free package
RoHS compliant
With visible leads