Infineon BFS481H6327XTSA1 RF Bipolar Transistor, 20 mA, 20 V, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

PHP67,596.00

(exc. VAT)

PHP75,708.00

(inc. VAT)

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  • 6,000 unit(s) shipping from April 16, 2026
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Units
Per Unit
Per Reel*
3000 +PHP22.532PHP67,596.00

*price indicative

RS Stock No.:
273-7308
Mfr. Part No.:
BFS481H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-363

Mount Type

Surface

Transistor Configuration

Two (Galvanic) Internal Isolated Transistors In One Package

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

175mW

Pin Count

6

Maximum Operating Temperature

150°C

Series

BFS481

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.

Halogen free

Easy to use

Pb free package

RoHS compliant

With visible leads

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