Infineon RF Bipolar Transistor, 20 mA, 20 V, 3-Pin SOT-323

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Subtotal (1 pack of 25 units)*

PHP227.10

(exc. VAT)

PHP254.35

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP9.084PHP227.10
50 - 75PHP8.811PHP220.28
100 - 225PHP8.283PHP207.08
250 - 975PHP7.538PHP188.45
1000 +PHP6.633PHP165.83

*price indicative

RS Stock No.:
273-7303
Mfr. Part No.:
BFR181WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

175mW

Pin Count

3

Maximum Operating Temperature

150°C

Series

BFR181W

Standards/Approvals

Pb-Free (RoHS)

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.

Easy to use

Halogen free

Pb free package

RoHS compliant

With visible leads

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