Infineon BFS483H6327XTSA1 RF Bipolar Transistor, 65 mA NPN, 20 V, 6-Pin SOT-363

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PHP238.30

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Per Pack*
10 - 40PHP21.28PHP212.80
50 - 90PHP20.642PHP206.42
100 - 240PHP19.404PHP194.04
250 - 990PHP17.658PHP176.58
1000 +PHP15.54PHP155.40

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Packaging Options:
RS Stock No.:
259-1460
Mfr. Part No.:
BFS483H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-363

Mount Type

Surface

Transistor Configuration

Isolated

Maximum Collector Base Voltage VCBO

20V

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-65°C

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

450mW

Maximum Transition Frequency ft

8GHz

Maximum Operating Temperature

150°C

Pin Count

6

Standards/Approvals

RoHS

Series

BFS

Height

0.9mm

Width

2 mm

Length

2.1mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Pb-free (RoHS compliant) package

Two (galvanic) internal isolated Transistor in one package

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