Infineon BFR183E6327HTSA1 NPN Bipolar Transistor, 65 mA, 20 V SOT-23

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Subtotal (1 pack of 25 units)*

PHP275.375

(exc. VAT)

PHP308.425

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP11.015PHP275.38
50 - 75PHP10.684PHP267.10
100 - 225PHP10.043PHP251.08
250 - 975PHP9.14PHP228.50
1000 +PHP8.042PHP201.05

*price indicative

Packaging Options:
RS Stock No.:
258-7737
Mfr. Part No.:
BFR183E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Number of Elements per Chip

1

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package
VCEO max is 12 V

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