Infineon BFR183E6327HTSA1 Bipolar Transistor, 65 mA NPN, 20 V, 3-Pin SOT-23

This image is representative of the product range

View all Bipolar Transistors
Bulk discount available

Subtotal (1 pack of 25 units)*

PHP275.375

(exc. VAT)

PHP308.425

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 150 unit(s) ready to ship from another location
  • Plus 9,000 unit(s) shipping from July 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
25 - 25PHP11.015PHP275.38
50 - 75PHP10.684PHP267.10
100 - 225PHP10.043PHP251.08
250 - 975PHP9.14PHP228.50
1000 +PHP8.042PHP201.05

*price indicative

Packaging Options:
RS Stock No.:
258-7737
Mfr. Part No.:
BFR183E6327HTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN

Maximum Transition Frequency ft

8GHz

Maximum Power Dissipation Pd

450mW

Pin Count

3

Maximum Operating Temperature

150°C

Length

2.9mm

Height

1mm

Width

2.4 mm

Standards/Approvals

RoHS

Series

BFR183

Automotive Standard

AEC-Q101

The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications

Pb free RoHS compliant package

VCEO max is 12 V

Related links