Infineon Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP23,718.00

(exc. VAT)

PHP26,565.00

(inc. VAT)

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  • Shipping from September 14, 2026
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Units
Per Unit
Per Reel*
3000 - 3000PHP7.906PHP23,718.00
6000 - 45000PHP7.816PHP23,448.00
48000 +PHP7.634PHP22,902.00

*price indicative

RS Stock No.:
258-6991
Mfr. Part No.:
BFR181E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Maximum Power Dissipation Pd

175mW

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

3GHz

Maximum Operating Temperature

125°C

Pin Count

3

Height

1mm

Length

2.9mm

Series

BAR63

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package

VCEO max is 12 V

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