Infineon BFP181E7764HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143

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Subtotal (1 pack of 25 units)*

PHP246.925

(exc. VAT)

PHP276.55

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP9.877PHP246.93
50 - 75PHP9.58PHP239.50
100 - 225PHP9.005PHP225.13
250 - 975PHP8.195PHP204.88
1000 +PHP7.212PHP180.30

*price indicative

Packaging Options:
RS Stock No.:
258-7682
Mfr. Part No.:
BFP181E7764HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-143

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

175mW

Maximum Transition Frequency ft

8GHz

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Pin Count

4

Maximum Operating Temperature

150°C

Length

2.9mm

Standards/Approvals

RoHS

Series

BFP181

Width

2.4 mm

Height

1mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Qualification report according to AEC-Q101 available

Pb free RoHS compliant package

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