Infineon BFR181E6327HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23

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Subtotal (1 pack of 25 units)*

PHP257.70

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PHP288.625

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP10.308PHP257.70
50 - 75PHP9.998PHP249.95
100 - 225PHP9.398PHP234.95
250 - 975PHP8.552PHP213.80
1000 +PHP7.526PHP188.15

*price indicative

Packaging Options:
RS Stock No.:
258-7710
Distrelec Article No.:
304-40-490
Mfr. Part No.:
BFR181E6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Maximum Power Dissipation Pd

175mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

3GHz

Pin Count

3

Maximum Operating Temperature

125°C

Width

2.4 mm

Standards/Approvals

RoHS

Series

BAR63

Height

1mm

Length

2.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.

Pb free RoHS compliant package

VCEO max is 12 V

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