Infineon BFP840ESDH6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP356.40

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PHP399.175

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP14.256PHP356.40
50 - 75PHP13.828PHP345.70
100 - 225PHP12.999PHP324.98
250 - 975PHP11.829PHP295.73
1000 +PHP10.409PHP260.23

*price indicative

Packaging Options:
RS Stock No.:
259-1454
Mfr. Part No.:
BFP840ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

2.25V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

2.9V

Maximum Transition Frequency ft

80GHz

Maximum Power Dissipation Pd

75mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

150

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Pin Count

4

Width

2.1 mm

Standards/Approvals

RoHS

Series

BFP

Height

0.9mm

Length

2mm

Automotive Standard

No

The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).

High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA

OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA

IC max +35mA

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