Infineon BFP840ESDH6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1454
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP462.50
(exc. VAT)
PHP518.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,650 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP18.50 | PHP462.50 |
| 50 - 75 | PHP17.945 | PHP448.63 |
| 100 - 225 | PHP16.868 | PHP421.70 |
| 250 - 975 | PHP15.35 | PHP383.75 |
| 1000 + | PHP13.508 | PHP337.70 |
*price indicative
- RS Stock No.:
- 259-1454
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 80GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum DC Current Gain hFE | 150 | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 80GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum DC Current Gain hFE 150 | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
Related links
- Infineon RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon BFP840FESDH6327XTSA1 Transistor 2.25 V, 4-Pin TSFP
- Infineon Transistor 2.25 V, 4-Pin TSFP
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343