Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS Stock No.:
- 258-0650
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP320.88
(exc. VAT)
PHP359.39
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 12,950 unit(s) shipping from February 23, 2026
- Plus 15,000 unit(s) shipping from October 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP32.088 | PHP320.88 |
| 20 - 90 | PHP29.436 | PHP294.36 |
| 100 - 240 | PHP27.448 | PHP274.48 |
| 250 - 490 | PHP24.066 | PHP240.66 |
| 500 + | PHP22.343 | PHP223.43 |
*price indicative
- RS Stock No.:
- 258-0650
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 75GHz | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFR840L3RHESD | |
| Width | 0.6 mm | |
| Height | 0.31mm | |
| Length | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 75GHz | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series BFR840L3RHESD | ||
Width 0.6 mm | ||
Height 0.31mm | ||
Length 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
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