Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9

View all Bipolar Transistors
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP320.88

(exc. VAT)

PHP359.39

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 12,950 unit(s) shipping from January 26, 2026
  • Plus 15,000 unit(s) shipping from October 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 10PHP32.088PHP320.88
20 - 90PHP29.436PHP294.36
100 - 240PHP27.448PHP274.48
250 - 490PHP24.066PHP240.66
500 +PHP22.343PHP223.43

*price indicative

Packaging Options:
RS Stock No.:
258-0650
Mfr. Part No.:
BFR840L3RHESDE6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSLP-3-9

Mounting Type

Surface Mount

The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.

Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links