Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS Stock No.:
- 258-0649
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 15000 units)*
PHP399,180.00
(exc. VAT)
PHP447,075.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 15,000 unit(s) shipping from October 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 15000 - 15000 | PHP26.612 | PHP399,180.00 |
| 30000 - 30000 | PHP23.951 | PHP359,265.00 |
| 45000 + | PHP21.556 | PHP323,340.00 |
*price indicative
- RS Stock No.:
- 258-0649
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 75GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.31mm | |
| Standards/Approvals | RoHS | |
| Width | 0.6 mm | |
| Length | 1mm | |
| Series | BFR840L3RHESD | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 75GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 0.31mm | ||
Standards/Approvals RoHS | ||
Width 0.6 mm | ||
Length 1mm | ||
Series BFR840L3RHESD | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
Related links
- Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor 2.25 V TSLP-3-9
- Infineon BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V SOT-343
- Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V, 4-Pin TSFP
- Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin TSLP-3-9
- Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor 6 V, 3-Pin TSFP
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFR182WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon BFR380L3E6327XTMA1 NPN Bipolar Transistor 15 V TSLP-3-1