Infineon BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V SOT-343

View all Bipolar Transistors

Subtotal (1 reel of 3000 units)*

PHP45,057.00

(exc. VAT)

PHP50,463.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from September 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP15.019PHP45,057.00

*price indicative

RS Stock No.:
259-1453
Mfr. Part No.:
BFP840ESDH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

SOT-343

Mounting Type

Surface Mount

The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).

High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links