Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP45,057.00

(exc. VAT)

PHP50,463.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP15.019PHP45,057.00

*price indicative

RS Stock No.:
259-1453
Mfr. Part No.:
BFP840ESDH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

2.25V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

2.9V

Transistor Polarity

NPN

Maximum Transition Frequency ft

80GHz

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

150

Maximum Power Dissipation Pd

75mW

Maximum Operating Temperature

150°C

Pin Count

4

Length

2mm

Width

2.1 mm

Height

0.9mm

Standards/Approvals

RoHS

Series

BFP

Automotive Standard

No

The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).

High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA

OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA

IC max +35mA

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