Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 3000 units)*
PHP45,057.00
(exc. VAT)
PHP50,463.00
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP15.019 | PHP45,057.00 |
*price indicative
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Transition Frequency ft | 80GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 2.1 mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Transition Frequency ft 80GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Width 2.1 mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
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