Infineon BFP196WH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1417
- Distrelec Article No.:
- 304-40-484
- Mfr. Part No.:
- BFP196WH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP261.675
(exc. VAT)
PHP293.075
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 75 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP10.467 | PHP261.68 |
| 50 - 75 | PHP10.153 | PHP253.83 |
| 100 - 225 | PHP9.544 | PHP238.60 |
| 250 - 975 | PHP8.685 | PHP217.13 |
| 1000 + | PHP7.642 | PHP191.05 |
*price indicative
- RS Stock No.:
- 259-1417
- Distrelec Article No.:
- 304-40-484
- Mfr. Part No.:
- BFP196WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum DC Current Gain hFE | 70 | |
| Minimum Operating Temperature | -60°C | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP196W | |
| Height | 0.9mm | |
| Length | 2.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum DC Current Gain hFE 70 | ||
Minimum Operating Temperature -60°C | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP196W | ||
Height 0.9mm | ||
Length 2.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.
Power amplifier for DECT and PCN systems
Pb-free (RoHS compliant) package
Related links
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- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343