Infineon BFP196WH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

PHP261.675

(exc. VAT)

PHP293.075

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP10.467PHP261.68
50 - 75PHP10.153PHP253.83
100 - 225PHP9.544PHP238.60
250 - 975PHP8.685PHP217.13
1000 +PHP7.642PHP191.05

*price indicative

Packaging Options:
RS Stock No.:
259-1417
Distrelec Article No.:
304-40-484
Mfr. Part No.:
BFP196WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

700mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-60°C

Maximum Transition Frequency ft

7.5GHz

Maximum Operating Temperature

150°C

Pin Count

4

Height

0.9mm

Width

2 mm

Length

2.1mm

Standards/Approvals

RoHS

Series

BFP196W

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.

Power amplifier for DECT and PCN systems

Pb-free (RoHS compliant) package

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