MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18216 Products showing for MOSFETs

    Vishay
    N
    30 A
    200 V
    85 mΩ
    TO-247AC
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    190 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    140 nC @ 10 V
    5.31mm
    Vishay
    N
    23 A
    250 V
    140 mΩ
    TO-247AC
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    190 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    140 nC @ 10 V
    5.31mm
    onsemi
    P
    47 A
    60 V
    26 mΩ
    D2PAK (TO-263)
    -
    Surface Mount
    3
    -25 V, +25 V
    Enhancement
    -
    2V
    3.75 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    84 nC @ 10 V
    9.65mm
    Infineon
    N
    57 A
    100 V
    25 mΩ
    TO-247AC
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    200 W
    -
    Single
    15.9mm
    +175 °C
    1
    Si
    190 nC @ 10 V
    5.3mm
    Infineon
    N
    110 A
    55 V
    8 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    146 nC @ 10 V
    4.69mm
    Vishay
    N
    33 A
    600 V
    98 mΩ
    TO-247AC
    EF Series
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    -
    2V
    278 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    103 nC @ 10 V
    5.31mm
    STMicroelectronics
    N
    80 A
    55 V
    7 mΩ
    D2PAK (TO-263)
    STripFET II
    Surface Mount
    3
    -16 V, +16 V
    Enhancement
    -
    1V
    300 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    100 nC @ 5 V
    9.35mm
    Infineon
    N
    12 A
    600 V
    210 mO
    TO-220
    CoolMOS™ 7
    Through Hole
    3
    -
    -
    4.5V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    18 A
    200 V
    150 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    150 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    67 nC @ 10 V
    4.83mm
    Vishay
    N
    3.1 A
    1000 V
    5 Ω
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    125 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    80 nC @ 10 V
    4.7mm
    Vishay
    N
    8 A
    500 V
    850 mΩ
    TO-220AB
    -
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    -
    2V
    125 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    38 nC @ 10 V
    4.7mm
    Infineon
    N
    20 A
    600 V
    190 mΩ
    TO-247
    CoolMOS S5
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5.5V
    3.5V
    208 W
    -
    Single
    15.9mm
    +150 °C
    1
    Si
    79 nC @ 10 V
    5.3mm
    Infineon
    N
    93 A
    250 V
    14.5 mΩ
    TO-247AC
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5V
    3V
    520 W
    -
    Single
    15.87mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    5.31mm
    onsemi
    P
    2.5 A
    60 V
    300 mΩ
    SOT-223
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    3 W
    -
    Single
    6.5mm
    +150 °C
    1
    Si
    11 nC @ 10 V
    3.56mm
    Infineon
    N
    49 A
    55 V
    17.5 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    94 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    63 nC @ 10 V
    9.02mm
    STMicroelectronics
    N
    37 A
    650 V
    -
    TO-247-4
    -
    Through Hole
    4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    STMicroelectronics
    N
    20 A
    600 V
    290 mΩ
    TO-220
    FDmesh
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    3V
    192 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    37 nC @ 10 V
    4.6mm
    Infineon
    N
    59 A
    100 V
    -
    PG-TO252-3
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STMicroelectronics
    N
    13 A
    600 V
    550 mΩ
    TO-220
    MDmesh, SuperMESH
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4.5V
    3V
    150 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    66 nC @ 10 V
    4.6mm
    Infineon
    N
    17 A
    100 V
    90 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    70 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    37 nC @ 10 V
    4.69mm
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