JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 806-1719
Mfr. Part No.BF256B
PHP12.696
Each (In a Pack of 50)
units
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS Stock No. 760-3123
Mfr. Part No.2SK208-R(TE85L,F)
BrandToshiba
PHP13.912
Each (In a Pack of 10)
units
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
PHP7.04
Each (On a Reel of 3000)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 169-7868
Mfr. Part No.DSK5J01R0L
BrandPanasonic
PHP9.296
Each (On a Reel of 3000)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 749-8268
Mfr. Part No.DSK5J01R0L
BrandPanasonic
PHP4.487
Each (In a Pack of 20)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 112-5510
Mfr. Part No.PMBFJ177,215
BrandNXP
PHP13.914
Each (In a Pack of 5)
units
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 145-5347
Mfr. Part No.J113
PHP3.578
Each (In a Bag of 1000)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 772-5920
Mfr. Part No.NE3514S02-A
PHP54.323
Each (In a Pack of 10)
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N 15 → 70mA 4 V -3 V - Single Single - Surface Mount SO2 4 - - 2.6 x 2.6 x 1.5mm
RS Stock No. 806-1766
Mfr. Part No.J113
PHP14.96
Each (In a Pack of 50)
units
N min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 626-3229
Mfr. Part No.PMBF4391,215
BrandNXP
PHP11.736
Each (In a Pack of 10)
units
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-1747
Mfr. Part No.J105
PHP29.109
Each (In a Pack of 10)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-2223
Mfr. Part No.MMBFJ110
PHP6.88
Each (On a Reel of 3000)
units
N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS Stock No. 166-0547
Mfr. Part No.PMBF4391,215
BrandNXP
PHP6.25
Each (On a Reel of 3000)
units
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-4302
Mfr. Part No.MMBFJ110
PHP9.842
Each (In a Pack of 25)
units
N Min. 10mA 15 V -25 V 25V Single Single 18 Ω Surface Mount SOT-23 3 85pF 85pF 2.92 x 1.4 x 0.94mm
RS Stock No. 756-0350
Mfr. Part No.2SK3320-BL(TE85L,F
BrandToshiba
PHP23.648
Each (In a Pack of 5)
units
N 6 → 14mA 50 V -1.5 V -50V Dual Common Source - Surface Mount USV 5 13pF - 2 x 1.25 x 0.9mm
RS Stock No. 169-7869
Mfr. Part No.DSK9J01P0L
BrandPanasonic
PHP8.749
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 626-2311
Mfr. Part No.BF513,215
BrandNXP
PHP12.202
Each (In a Pack of 10)
units
N 10 → 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-1757
Mfr. Part No.J112
PHP10.996
Each (In a Pack of 50)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
PHP4.662
Each (In a Bag of 1000)
units
N min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 749-8274
Mfr. Part No.DSK9J01P0L
BrandPanasonic
PHP6.253
Each (In a Pack of 20)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
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