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Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP369.17

(exc. VAT)

PHP413.47

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

484 unit(s) ready to ship from another location

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Units	Per Unit
1 - 9	PHP369.17
10 - 49	PHP358.09
50 - 99	PHP343.75
100 - 249	PHP326.56
250 +	PHP306.96

*price indicative

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	98mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	278W
	Typical Gate Charge Qg @ Vgs	103nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Standards/Approvals	No
	Length	15.87mm
	Width	5.31 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 98mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 278W
	Typical Gate Charge Qg @ Vgs 103nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Standards/Approvals No
	Length 15.87mm
	Width 5.31 mm
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3

FREE delivery for orders over ₱3,000.00

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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