Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3

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Subtotal (1 pack of 5 units)*

PHP1,088.23

(exc. VAT)

PHP1,218.82

(inc. VAT)

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Last RS stock
  • Final 310 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP217.646PHP1,088.23
10 - 95PHP211.116PHP1,055.58
100 - 245PHP198.452PHP992.26
250 - 495PHP180.59PHP902.95
500 +PHP158.92PHP794.60

*price indicative

Packaging Options:
RS Stock No.:
210-4988
Mfr. Part No.:
SiHG186N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

21nC

Maximum Operating Temperature

150°C

Length

33.91mm

Standards/Approvals

No

Height

4.58mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has TO-247AC package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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