Vishay EF Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin TO-247 SiHG70N60EF-GE3

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PHP723.57

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PHP810.40

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Units
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1 - 9PHP723.57
10 - 49PHP701.87
50 - 99PHP680.83
100 - 249PHP660.41
250 +PHP640.59

*price indicative

Packaging Options:
RS Stock No.:
903-4475
Mfr. Part No.:
SiHG70N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

253nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

520W

Maximum Operating Temperature

150°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

No

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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