N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SIHB28N60EF-GE3

RS Stock No.:: 177-7628
Mfr. Part No.:: SIHB28N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SIHB28N60EF-GE3

Subtotal (1 bag of 1000 units)**

PHP177,723.00

(exc. VAT)

PHP199,050.00

(inc. VAT)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Bag**
1000 +	PHP177.723	PHP177,723.00

**price indicative

RS Stock No.:: 177-7628
Mfr. Part No.:: SIHB28N60EF-GE3
Manufacturer:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	EF Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	80 nC @ 10 V
Width	9.65mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.67mm
Height	4.83mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SIHB28N60EF-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links