onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223 NDT2955

RS Stock No.:: 671-1096
Mfr. Part No.:: NDT2955
Manufacturer:: onsemi

onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223 NDT2955

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP189.14

(exc. VAT)

PHP211.835

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Supply shortage

Due to limitations in the supply chain, stock is being assigned as it becomes available.

Units	Per Unit	Per Pack*
5 - 20	PHP37.828	PHP189.14
25 - 45	PHP36.692	PHP183.46
50 - 245	PHP35.59	PHP177.95
250 - 495	PHP34.522	PHP172.61
500 +	PHP33.488	PHP167.44

*price indicative

RS Stock No.:: 671-1096
Mfr. Part No.:: NDT2955
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	NDT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.5mm
	Height	1.6mm
	Width	3.56 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series NDT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.5mm
	Height 1.6mm
	Width 3.56 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.