Vishay IRFBG Type N-Channel MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220 IRFBG30PBF
- RS Stock No.:
- 541-1146
- Distrelec Article No.:
- 171-15-229
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
This image is representative of the product range
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Subtotal (1 unit)*
PHP105.45
(exc. VAT)
PHP118.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 952 unit(s) ready to ship from another location
- Plus 18 unit(s) shipping from March 19, 2026
- Plus 1,000 unit(s) shipping from May 29, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP105.45 |
| 10 - 49 | PHP103.32 |
| 50 - 99 | PHP101.24 |
| 100 - 499 | PHP99.23 |
| 500 + | PHP81.68 |
*price indicative
- RS Stock No.:
- 541-1146
- Distrelec Article No.:
- 171-15-229
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | IRFBG | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series IRFBG | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
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