Vishay SIHB Type N-Channel MOSFET, 34 A, 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

PHP406.11

(exc. VAT)

PHP454.844

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 994 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP203.055PHP406.11
10 - 28PHP198.86PHP397.72
30 - 98PHP194.665PHP389.33
100 +PHP183.465PHP366.93

*price indicative

Packaging Options:
RS Stock No.:
279-9905
Mfr. Part No.:
SIHB150N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

64nC

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

Related links