Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- RS Stock No.:
- 279-9905
- Mfr. Part No.:
- SIHB150N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP552.16
(exc. VAT)
PHP618.42
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 986 unit(s) shipping from June 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP276.08 | PHP552.16 |
| 10 - 28 | PHP270.375 | PHP540.75 |
| 30 - 98 | PHP264.67 | PHP529.34 |
| 100 + | PHP249.44 | PHP498.88 |
*price indicative
- RS Stock No.:
- 279-9905
- Mfr. Part No.:
- SIHB150N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.137Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.137Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHB150N60E-GE3
This power MOSFET is a high-voltage switching transistor designed for use in power conversion and control circuits within industrial and automation environments. It operates as an enhancement-mode N-channel device in a surface-mount TO-263 package, offering a practical footprint for assemblies that require robust high-voltage switching while withstanding a wide temperature range.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 22A continuous drain current allows sustained load handling • 0.137Ω Rds(on) reduces conduction losses under load • 179W power dissipation supports higher power stages • 36nC typical gate charge facilitates manageable switching losses • 30V gate voltage rating allows broad gate-drive flexibility
Applications
• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor drives in industrial automation systems • Used for inverter stages in power conversion modules • Can be used for high-voltage relay replacement in control gear • Used with power assemblies operating at elevated temperatures
What temperature range can the device tolerate during operation?
It is specified to operate down to -55°C and up to 150°C ambient extremes, suitable for harsh industrial thermal conditions.
How many terminals does the package provide and what mounting style is used?
The device has three pins and is supplied in a surface-mount TO-263 package for PCB assembly.
What maximum gate drive should be applied to the gate electrode?
The gate-source voltage must not exceed 30V to prevent gate overstress.
What is the typical switching characteristic to consider for drive design?
The gate charge is 36nC, which should be factored into driver sizing to control switching transitions and losses.
Related links
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- Vishay SIHB Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 SQW33N65EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3