Vishay SIHB Type N-Channel MOSFET, 34 A, 600 V Enhancement, 3-Pin TO-263

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Bulk discount available

Subtotal (1 tube of 50 units)*

PHP8,251.60

(exc. VAT)

PHP9,241.80

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 50PHP165.032PHP8,251.60
100 +PHP146.694PHP7,334.70

*price indicative

RS Stock No.:
279-9903
Mfr. Part No.:
SIHB150N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

600V

Series

SIHB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

64nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.67mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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