Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 3000 units)*

PHP698,544.00

(exc. VAT)

PHP782,370.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP232.848PHP698,544.00

*price indicative

RS Stock No.:
204-7245
Mfr. Part No.:
SIHB125N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Series

SiHB125N60EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

31nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

4.06mm

Length

14.61mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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