Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

RS Stock No.:: 204-7245
Mfr. Part No.:: SIHB125N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

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Subtotal (1 reel of 3000 units)*

PHP698,544.00

(exc. VAT)

PHP782,370.00

(inc. VAT)

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Shipping from February 15, 2027

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Units	Per Unit	Per Reel*
3000 +	PHP232.848	PHP698,544.00

*price indicative

RS Stock No.:: 204-7245
Mfr. Part No.:: SIHB125N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	9.65mm
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 9.65mm
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SIHB125N60EF-GE3

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SIHB125N60EF-GE3

This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount applications where robust drain current and thermal handling are required. It operates across a wide ambient range and is intended for switching and power conversion tasks in industrial and commercial electronics. The device is supplied in a TO-263 package compatible with surface-mount assembly and conforms to RoHS restrictions.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 25A continuous drain current supports heavy load currents
• 179W power dissipation allows sustained thermal performance
• 125mΩ Rds(on) minimises conduction losses during operation
• 31nC typical gate charge permits efficient gate-drive timing
• Vgs maximum 30V affords wide gate-drive margin for control

Applications

• Suitable for primary-side SMPS switches in high-voltage supplies
• Ideal for power-factor-correction stages requiring high voltage
• Used with motor-drive front-ends handling elevated voltages
• Can be used for inverter-leg switches in industrial converters
• Suitable for LED drivers needing high-voltage switching capacity

What temperature extremes can the device withstand in service?

It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.

How many electrical connections does the package provide?

The device uses a three-pin configuration suitable for common MOSFET topologies and PCB layouts.

Is this device suitable for automotive qualification programmes?

It is not designated as an automotive-standard component and lacks explicit automotive approval.

What mounting method is required for thermal and mechanical stability?

It is intended for surface mounting in TO-263 format, which facilitates heat transfer to the PCB copper areas.